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PTVS10VP1UTP Datasheet(PDF) 5 Page - NXP Semiconductors |
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PTVS10VP1UTP Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 11 October 2011 5 of 12 NXP Semiconductors PTVSxP1UTP series High-temperature 600 W Transient Voltage Suppressor 40V 40 44.40 46.80 49.10 0.001 0.1 0.5 64.5 9.3 48.1 43V 43 47.80 50.30 52.80 0.001 0.1 0.5 69.4 8.6 51.6 45V 45 50.00 52.65 55.30 0.001 0.1 0.5 72.7 8.3 55.2 48V 48 53.30 56.10 58.90 0.001 0.1 0.5 77.4 7.8 58.2 51V 51 56.70 59.70 62.70 0.001 0.1 0.5 82.4 7.3 62.5 54V 54 60.00 63.15 66.30 0.001 0.1 0.5 87.1 6.9 66.1 58V 58 64.40 67.80 71.20 0.001 0.1 0.5 93.6 6.4 71.4 60V 60 66.70 70.20 73.70 0.001 0.1 0.5 96.8 6.2 74.1 64V 64 71.10 74.85 78.60 0.001 0.1 0.5 103.0 5.8 80.0 Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP …continued Tj =25 C unless otherwise specified. Type number PTVSxxx P1UTP Reverse standoff voltage VRWM (V) Breakdown voltage VBR (V) Reverse leakage current IRM (A) Clamping voltage VCL (V) Temperature coefficient SZ (mV/K) IR =1mA at VRWM at VRWM Tj = 150 C IZ =5 mA Max Min Typ Max Typ Max Typ Max IPPM (A) Typ |
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