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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

250

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

250

Vdc

Gate–to–Source Voltage — Continuous

— Non–Repetitive (tp ≤ 10 ms)

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current

— Continuous

— Continuous @ 100

°C

— Single Pulse (tp ≤ 10 µs)

ID

ID

IDM

9.0

5.7

32

Adc

Apk

Total Power Dissipation

Derate above 25

°C

PD

80

0.64

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25 Ω)

EAS

122

mJ

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

1.56

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MTP9N25E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1995

MTP9N25E

TMOS POWER FET

9.0 AMPERES

250 VOLTS

RDS(on) = 0.45 OHM

Motorola Preferred Device

®

D

S

G

CASE 221A–06, Style 5

TO–220AB