Electronic Components Datasheet Search |
|
MTP8N06E Datasheet(PDF) 1 Page - Motorola, Inc |
|
MTP8N06E Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 8 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 30 Vdc Vpk Drain Current — Continuous — Continuous @ 100 °C — Single Pulse (tp ≤ 10 µs) ID ID IDM 8.0 6.4 24 Adc Apk Total Power Dissipation Derate above 25 °C PD 40 0.32 Watts W/ °C Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 3.0 mH, RG = 25 Ω) EAS 96 mJ Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 3.13 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Order this document by MTP8N06E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1995 MTP8N06E TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM Motorola Preferred Device ® D S G CASE 221A–06, Style 5 TO–220AB |
Similar Part No. - MTP8N06E |
|
Similar Description - MTP8N06E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |