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TO-92 Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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TO-92 Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 1 page WEJ ELECTRONIC CO.,LTD MPSW56 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1 W (Tamb=25 ℃) Collector current ICM: -500 mA Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-3V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-50mA 100 DC current gain hFE(2) VCE=-1V, IC=-250mA 50 Collector-emitter saturation voltage VCE(sat) IC=-250mA, IB=-10mA -0.5 V Base-emitter voltage VBE VCE=-5V, IC=-250mA -1.2 V Transition frequency fT VCE=-5V, IC=-250mA 50 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 15 pF 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR MPSW56 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
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