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IXDN514SIA Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXDN514SIA
Description  14 Ampere Low-Side Ultrafast MOSFET Drivers
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDN514SIA Datasheet(HTML) 5 Page - IXYS Corporation

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5
IXDI514 / IXDN514
Pin Description
CAUTION: Follow proper ESD procedures when handling and assembling this component.
* The following notes are meant to define the conditions for the θ
J-A, θJ-C and θJ-S values:
1) The
θ
J-A (typ) is defined as junction to ambient. The θJ-A of the standard single die 8-Lead PDIP and 8-Lead SOIC are dominated by the
resistance of the package, and the IXD_5XX are typical. The values for these packages are natural convection values with vertical boards
and the values would be lower with natural convection. For the 6-Lead DFN package, the
θ
J-A value supposes the DFN package is soldered
on a PCB. The
θ
J-A (typ) is 200 °C/W with no special provisions on the PCB, but because the center pad provides a low thermal resistance
to the die, it is easy to reduce the
θ
J-A by adding connected copper pads or traces on the PCB. These can reduce the θJ-A (typ) to 125 °C/W
easily, and potentially even lower. The
θ
J-A for DFN on PCB without heatsink or thermal management will vary significantly with size,
construction, layout, materials, etc. This typical range tells the user what he is likely to get if he does no thermal management.
2)
θ
J-C (max) is defined as juction to case, where case is the large pad on the back of the DFN package. The θJ-C values are generally not
published for the PDIP and SOIC packages. The
θ
J-C for the DFN packages are important to show the low thermal resistance from junction to
the die attach pad on the back of the DFN, -- and a guardband has been added to be safe.
3) The
θ
J-S (typ) is defined as junction to heatsink, where the DFN package is soldered to a thermal substrate that is mounted on a heatsink.
The value must be typical because there are a variety of thermal substrates. This value was calculated based on easily available IMS in the
U.S. or Europe, and not a premium Japanese IMS. A 4 mil dialectric with a thermal conductivity of 2.2W/mC was assumed. The result was
given as typical, and indicates what a user would expect on a typical IMS substrate, and shows the potential low thermal resistance for the
DFNpackage.
SYMBOL
FUNCTION
DESCRIPTION
VCC
Supply Voltage
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 30V.
IN
Input
Input signal-TTL or CMOS compatible.
OUT
Output
Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
GND
Ground
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
Figure 3 - Characteristics Test Diagram
0V
5.0V
0V
Vcc
IXDI414
IXDN414
0V
Vcc
Agilent 1147A
Current Probe
15nF
10uF
25V
IXDI514
IXDN514
2500 pf


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