SUP85N10-10P datasheet(3/8 Pages) VISHAY

Part #	SUP85N10-10P

Description	N-Channel 100 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUP85N10-10P

Document Number: 64833

S11-2239-Rev. B, 14-Nov-11

www.vishay.com

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

0

20

40

60

80

100

120

0

1

234

5

VGS =10 V thru 7 V

VGS =6 V

VDS - Drain-to-Source Voltage (V)

0

30

60

90

120

150

0

10203040

50

ID - Drain Current (A)

TC = 125 °C

TC = - 55 °C

TC = 25 °C

Crss

0

1000

2000

3000

4000

5000

6000

0

204060

80

100

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

10

0

246

8

10

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0.000

0.005

0.010

0.015

0.020

020

40

60

80

100

120

VGS =10 V

ID - Drain Current (A)

0

2

4

6

8

10

020

40

60

80

ID =16A

VDS =75 V

VDS =50 V

VDS =25 V

Qg - Total Gate Charge (nC)

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