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SUP85N10-10P Datasheet(PDF) 3 Page - Vishay Siliconix |
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SUP85N10-10P Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Vishay Siliconix SUP85N10-10P Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance 0 20 40 60 80 100 120 0 1 234 5 VGS =10 V thru 7 V VGS =6 V VDS - Drain-to-Source Voltage (V) 0 30 60 90 120 150 0 10203040 50 ID - Drain Current (A) TC = 125 °C TC = - 55 °C TC = 25 °C Crss 0 1000 2000 3000 4000 5000 6000 0 204060 80 100 Ciss Coss VDS - Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 2 4 6 8 10 0 246 8 10 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) 0.000 0.005 0.010 0.015 0.020 020 40 60 80 100 120 VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 020 40 60 80 ID =16A VDS =75 V VDS =50 V VDS =25 V Qg - Total Gate Charge (nC) |
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