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PZU8.2DB2 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PZU8.2DB2 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page PZUXDB2_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 31 March 2008 3 of 12 NXP Semiconductors PZUxDB2 series Dual Zener diodes [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China [2] /DG: halogen-free plastic package 5. Limiting values [1] tp = 100 µs; square wave; Tj =25 °C prior to surge [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. PZU10DB2 TF* PZU10DB2/DG UF* PZU11DB2 TG* PZU11DB2/DG UG* PZU12DB2 TH* PZU12DB2/DG UH* PZU13DB2 TK* PZU13DB2/DG UK* PZU14DB2 TL* PZU14DB2/DG UL* PZU15DB2 TM* PZU15DB2/DG UM* PZU16DB2 TN* PZU16DB2/DG UN* PZU18DB2 TP* PZU18DB2/DG UP* PZU20DB2 TR* PZU20DB2/DG UR* PZU22DB2 TS* PZU22DB2/DG US* PZU24DB2 TT* PZU24DB2/DG UT* Table 4. Marking codes …continued Type number Marking code[1] Type number[2] Marking code[1] Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode IF forward current - 200 mA IZSM non-repetitive peak reverse current [1] - see Table 8 PZSM non-repetitive peak reverse power dissipation [1] -40 W Per device Ptot total power dissipation Tamb ≤ 25 °C [2] - 250 mW [3] - 275 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C |
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