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MP4560 Datasheet(PDF) 8 Page - Monolithic Power Systems |
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MP4560 Datasheet(HTML) 8 Page - Monolithic Power Systems |
8 / 19 page MP4560 – 2A, 2MHz, 55V STEP-DOWN CONVERTER MP4560 Rev. 1.0 www.MonolithicPower.com 8 11/5/2012 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2012 MPS. All Rights Reserved. Internal Regulator Most of the internal circuitries are powered from the 2.6V internal regulator. This regulator takes the VIN input and operates in the full VIN range. When VIN is greater than 3.0V, the output of the regulator is in full regulation. When VIN is lower than 3.0V, the output decreases. Enable Control The MP4560 has a dedicated enable control pin (EN). With high enough input voltage, the chip can be enabled and disabled by EN which has positive logic. Its falling threshold is a precision 1.2V, and its rising threshold is 1.5V (300mV higher). When floating, EN is pulled up to about 3.0V by an internal 1µA current source so it is enabled. To pull it down, 1µA current capability is needed. When EN is pulled down below 1.2V, the chip is put into the lowest shutdown current mode. When EN is higher than zero but lower than its rising threshold, the chip is still in shutdown mode but the shutdown current increases slightly. Under-Voltage Lockout (UVLO) Under-voltage lockout (UVLO) is implemented to protect the chip from operating at insufficient supply voltage. The UVLO rising threshold is about 3.0V while its falling threshold is a consistent 2.6V. Internal Soft-Start The soft-start is implemented to prevent the converter output voltage from overshooting during startup and short circuit recovery. When the chip starts, the internal circuitry generates a soft-start voltage (SS) ramping up from 0V to 2.6V. When it is lower than the internal reference (REF), SS overrides REF so the error amplifier uses SS as the reference. When SS is higher than REF, REF regains control. Thermal Shutdown Thermal shutdown is implemented to prevent the chip from operating at exceedingly high temperatures. When the silicon die temperature is higher than its upper threshold, it shuts down the whole chip. When the temperature is lower than its lower threshold, the chip is enabled again. Floating Driver and Bootstrap Charging The floating power MOSFET driver is powered by an external bootstrap capacitor. This floating driver has its own UVLO protection. This UVLO’s rising threshold is 2.2V with a hysteresis of 150mV. The driver’s UVLO is soft-start related. In case the bootstrap voltage hits its UVLO, the soft-start circuit is reset. To prevent noise, there is 20µs delay before the reset action. When bootstrap UVLO is gone, the reset is off and then soft-start process resumes. The bootstrap capacitor is charged and regulated to about 5V by the dedicated internal bootstrap regulator. When the voltage between the BST and SW nodes is lower than its regulation, a PMOS pass transistor connected from VIN to BST is turned on. The charging current path is from VIN, BST and then to SW. External circuit should provide enough voltage headroom to facilitate the charging. As long as VIN is sufficiently higher than SW, the bootstrap capacitor can be charged. When the power MOSFET is ON, VIN is about equal to SW so the bootstrap capacitor cannot be charged. When the external diode is on, the difference between VIN and SW is largest, thus making it the best period to charge. When there is no current in the inductor, SW equals the output voltage VOUT so the difference between VIN and VOUT can be used to charge the bootstrap capacitor. At higher duty cycle operation condition, the time period available to the bootstrap charging is less so the bootstrap capacitor may not be sufficiently charged. In case the internal circuit does not have sufficient voltage and the bootstrap capacitor is not charged, extra external circuitry can be used to ensure the bootstrap voltage is in the normal operational region. Refer to External Bootstrap Diode in Application section. The DC quiescent current of the floating driver is about 20µA. Make sure the bleeding current at the SW node is higher than this value, such that: A 20 ) 2 R 1 R ( V I O O μ > + + |
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