LY6264

Rev. 2.8

8K X 8 BIT LOW POWER CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 35/55/70ns

Low power consumption:

Operating current : 20/15/10mA (TYP.)

Standby current : 1

μA (TYP.)

Single 2.7~5.5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 1.5V (MIN.)

Green package available

Package : 28-pin 600 mil PDIP

28-pin 330 mil SOP

28-pin 8mm x 13.4mm STSOP

28-pin 300 mil Skinny P-DIP

GENERAL DESCRIPTION

The LY6264 is a 65,536-bit low power CMOS static

random access memory organized as 8,192 words

by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY6264 is well designed for very low power

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The LY6264 operates from a single power supply

of 2.7~5.5V and all inputs and outputs are fully TTL

compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY6264

0 ~ 70℃

2.7 ~ 5.5V

35/55/70ns

1µA

20/15/10mA

LY6264(E)

-20 ~ 80℃

2.7 ~ 5.5V

35/55/70ns

1µA

20/15/10mA

LY6264(I)

-40 ~ 85℃

2.7 ~ 5.5V

35/55/70ns

1µA

20/15/10mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

8Kx8

MEMORY ARRAY

COLUMN I/O

A0-A12

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

CE2

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A12

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#, CE2

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

Power Supply

Ground

NC

No Connection