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LT6164DL-10I Datasheet(PDF) 8 Page - Lyontek Inc. |
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LT6164DL-10I Datasheet(HTML) 8 Page - Lyontek Inc. |
8 / 13 page LY6164 Rev. 1.4 8K X 8 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# V ≧ CC -0.2V or CE2 ≦ 0.2V 2.0 - 5.5 V Data Retention Current IDR VCC = 2.0V CE# V ≧ CC - 0.2V or CE2 ≦ 0.2V Others at 0.2V or VCC-0.2V - 0.6 3 mA Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) Vcc CE# VDR ≧ 2.0V CE# V ≧ cc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) Low Vcc Data Retention Waveform (2) (CE2 controlled) Vcc CE2 VDR ≧ 2.0V CE2 ≦ 0.2V Vcc(min.) VIL tR tCDR VIL Vcc(min.) |
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