LY65W64

Rev. 1.1

8K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 25ns

Low power consumption:

Operating current : 30mA (TYP.)

Standby current : 1

μA (TYP.)

Single 3~5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 28-pin 300 mil SOJ

28-pin 8mm x 13.4mm STSOP

GENERAL DESCRIPTION

The LY65W64 is a 65,536-bit high speed CMOS

static random access memory organized as 8,192

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY65W64 is well designed for high speed

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The LY65W64 operates from a single power

supply of 3~5V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

LY65W64(LL)

0 ~ 70℃

3.0 ~ 5.5V

25ns

1µA

30mA

LY65W64(LLI)

-40 ~ 85℃

3.0 ~ 5.5V

25ns

1µA

30mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

8Kx8

MEMORY ARRAY

COLUMN I/O

A0-A12

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

CE2

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A12

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#, CE2

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

Power Supply

Ground

NC

No Connection