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LY62L12916LL-55SL Datasheet(PDF) 6 Page - Lyontek Inc. |
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LY62L12916LL-55SL Datasheet(HTML) 6 Page - Lyontek Inc. |
6 / 17 page LY62L12916 Rev. 1.0 128K X 16 BIT LOW POWER CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 ® CAPACITANCE (TA = 25 , f ℃ = 1.0MHz) PARAMETER SYMBOL MIN. MAX UNIT Input Capacitance CIN - 6 pF Input/Output Capacitance CI/O - 8 pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels 0.2V to VCC -0.2V Input Rise and Fall Times 3ns Input and Output Timing Reference Levels 1.5V Output Load CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM. LY62L12916-45 LY62L12916-55 LY62L12916-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time tRC 45 - 55 - 70 - ns Address Access Time tAA - 45 - 55 - 70 ns Chip Enable Access Time tACE - 45 - 55 - 70 ns Output Enable Access Time tOE - 25 - 30 - 35 ns Chip Enable to Output in Low-Z tCLZ* 10 - 10 - 10 - ns Output Enable to Output in Low-Z tOLZ* 5 - 5 - 5 - ns Chip Disable to Output in High-Z tCHZ* - 15 - 20 - 25 ns Output Disable to Output in High-Z tOHZ* - 15 - 20 - 25 ns Output Hold from Address Change tOH 10 - 10 - 10 - ns LB#, UB# Access Time tBA - 45 - 55 - 70 ns LB#, UB# to High-Z Output tBHZ* - 20 - 25 - 30 ns LB#, UB# to Low-Z Output tBLZ* 10 - 10 - 10 - ns (2) WRITE CYCLE PARAMETER SYM. LY62L12916-45 LY62L12916-55 LY62L12916-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Write Cycle Time tWC 45 - 55 - 70 - ns Address Valid to End of Write tAW 40 - 50 - 60 - ns Chip Enable to End of Write tCW 40 - 50 - 60 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Write Pulse Width tWP 35 - 45 - 55 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Data to Write Time Overlap tDW 20 - 25 - 30 - ns Data Hold from End of Write Time tDH 0 - 0 - 0 - ns Output Active from End of Write tOW* 5 - 5 - 5 - ns Write to Output in High-Z tWHZ* - 15 - 20 - 25 ns LB#, UB# Valid to End of Write tBW 35 - 45 - 60 - ns *These parameters are guaranteed by device characterization, but not production tested. |
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