LY62L102516A

Rev. 1.0

1024K x 16 BIT LOW POWER CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 55/70ns

Low power consumption:

Operating current : 45/30mA (TYP.)

Standby current : 4

μA (TYP.) SL-version

Single 2.7V ~ 3.6V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control :

LB# controlled DQ0 ~ DQ7

UB# controlled DQ8 ~ DQ15

Data retention voltage : 1.2V (MIN.)

Green package available

Package : 48-pin 12mm x 20mm TSOP-I

GENERAL DESCRIPTION

The LY62L102516A is a 16,777,216-bit low power

CMOS static random access memory organized as

1,048,576 words by 16 bits. It is fabricated using

very high performance, high reliability CMOS

technology. Its standby current is stable within the

range of operating temperature.

The LY62L102516A is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY62L102516A operates from a single

power supply of 2.7V ~ 3.6V and all inputs and

outputs are fully TTL compatible.

PRODUCT FAMILY

Product

Family

Operating

Temperatur

e

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY62L102516A

0 ~ 70℃

2.7 ~ 3.6V

55/70ns

4µA(SL)

45/30mA

LY62L102516A(I)

-40 ~ 85℃

2.7 ~ 3.6V

55/70ns

4µA(SL)

45/30mA

FUNCTIONAL BLOCK DIAGRAM

CONTROL

CIRCUIT

DECODER

1024Kx16

MEMORY ARRAY

COLUMN I/O

A0~A19

Vcc

Vss

DQ8-DQ15

Upper Byte

DQ0-DQ7

Lower Byte

I/O DATA

CIRCUIT

CE2

WE#

OE#

LB#

UB#

CE#

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A19

Address Inputs

DQ0 – DQ15 Data Inputs/Outputs

CE#, CE2

Chip Enable Input

WE#

Write Enable Input

OE#

Output Enable Input

LB#

Lower Byte Control

UB#

Upper Byte Control

Power Supply

Ground