MTP55N06Z

4

Motorola TMOS Power MOSFET Transistor Device Data

Figure 7. Capacitance Variation

Figure 8. Gate–to–Source and

Drain–to–Source Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

10

25

–10

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)

4000

3200

1600

2400

QG, TOTAL GATE CHARGE (nC)

24

40

0

8.0

4.0

2.0

0

100

1.0

RG, GATE RESISTANCE (OHMS)

1000

100

10

VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

0.54

0.5

30

20

10

0

0.58

1.0

10

0.1

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

100

10

1.0

0.1

TJ, STARTING JUNCTION TEMPERATURE (°C)

50

25

500

400

300

100

0

125

800

0

–5.0

0

5.0

15

20

28

32

4.0

8.0

12

16

20

6.0

10

12

10

0.62 0.66 0.70 0.74

0.94

100

75

100

150

200

36

TJ = 25°C

ID = 30 A

VDD = 30 V

VGS = 10 V

0.78 0.82 0.86 0.90

TJ = 25°C

VGS = 0 V

ID = 30 A

TJ = 25°C

Ciss

Coss

Crss

Ciss

Crss

VDS = 0 V VGS = 0 V

VGS

VDS

32

16

8.0

0

24

40

48

TJ = 25°C

ID = 30 A

VDS

VGS

QT

Q3

Q2

Q1

td(on)

VGS = 20 V

SINGLE PULSE

TC = 25°C

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LMIT

100

ms

10

ms

1.0 ms

10 ms

dc

td(off)

tr

tf