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LY61L12816ML-12LLI Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY61L12816ML-12LLI Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 14 page LY61L12816 Rev. 1.5 128K X 16 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® FEATURES Fast access time : 10/12/15/20/25ns Very low power consumption: Operating current(Normal version): 200/180/150/110/90mA(TYP.) Operating current(15/20/25ns LL version): 45/40/35mA(TYP.) Standby current(Normal version): 0.5mA(TYP.) Standby current(15/20/25ns LL version): 20µA(TYP.) Single 3.3V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The LY61L12816 is a 2,087,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L12816 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY61L12816 operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) LY61L12816 0 ~ 70℃ 3.15 ~ 3.6V 10/12ns 0.5mA 200/180mA LY61L12816(E) -20 ~ 80℃ 3.15 ~ 3.6V 10/12ns 0.5mA 200/180mA LY61L12816(I) -40 ~ 85℃ 3.15 ~ 3.6V 10/12ns 0.5mA 200/180mA LY61L12816 0 ~ 70℃ 3.0 ~ 3.6V 15/20/25ns 0.5mA 150/110/90mA LY61L12816(LL) 0 ~ 70℃ 3.0 ~ 3.6V 15/20/25ns 20µA(LL) 45/40/35mA(LL) |
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