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C3225JB2A105KT Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # C3225JB2A105KT
Description  RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

C3225JB2A105KT Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
TYPICAL CHARACTERISTICS
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD =20 V
25 V
400
16
23
0
200
50
18
17
100
150
21
20
22
IDQ = 900 mA
f = 450 MHz
35 V
40 V
19
250
300
350
45 V
40
35
60
15
25_C
TC =--30_C
85_C
25
50
45
40
Pin, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
VDD =50 Vdc
IDQ = 900 mA
f = 450 MHz
20
30
55
18
25
10
10
80
24
22
20
70
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
ηD
23
21
19
100
500
25_C
TC =--30_C
85_C
85_C
Gps
VDD =50 Vdc
IDQ = 900 mA
f = 450 MHz
25_C
--30_C
30 V
50 V
35
250
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 300 W, and ηD = 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110
130
150
170
190
210
230
106


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