LY61L51216A

Rev. 1.3

512K X 16 BIT HIGH SPEED CMOS SRAM

5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan

TEL: 886-3-6668838

FAX: 886-3-6668836

1

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FEATURES

Fast access time : 8/10/12ns

low power consumption:

Operating current:

90/80/70mA (TYP. 8/10/12ns)

Standby current:

3mA(TYP)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage : 1.5V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

48-ball 6mmx8mm TFBGA

GENERAL DESCRIPTION

The LY61L51216A is a 8M-bit high speed CMOS

static random access memory organized as 512K

words by 16 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY61L51216A operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

LY61L51216A

0 ~ 70℃

3.0 ~ 3.6V

8/10/12ns

3mA

90/80/70mA

LY61L51216A(I)

-40 ~ 85℃

3.0 ~ 3.6V

8/10/12ns

3mA

90/80/70mA

LY61L51216A

0 ~ 70℃

2.7 ~ 3.6V

10/12ns

3mA

80/70mA

LY61L51216A(I)

-40 ~ 85℃

2.7 ~ 3.6V

10/12ns

3mA

80/70mA

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A18

Address Inputs

DQ0 – DQ15 Data Inputs/Outputs

CE#

Chip Enable Input

WE#

Write Enable Input

OE#

Output Enable Input

LB#

Lower Byte Control

UB#

Upper Byte Control

Power Supply

Ground