LY61L256

Rev. 1.4

32K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 10/12/15ns

Low power consumption:

Operating current : 60/50/40mA (TYP.)

Standby current : 0.5mA (TYP.)

1

μA (TYP.) LL-version

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 28-pin 300 mil SOJ

28-pin 8mm x 13.4mm STSOP

GENERAL DESCRIPTION

The LY61L256 is a 262,144-bit high speed CMOS

static random access memory organized as 32,768

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY61L256 is well designed for high speed

system application. Easy expansion is provided by

using an active LOW Chip Enable(CE#). The active

LOW Write Enable(WE#) controls both writing and

reading of the memory.

The LY61L256 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

LY61L256

0 ~ 70℃

3.15 ~ 3.6V

10ns

0.5mA

60mA

LY61L256

0 ~ 70℃

3.0 ~ 3.6V

12/15ns

0.5mA

50/40mA

LY61L256(E)

-20 ~ 80℃

3.15 ~ 3.6V

10ns

0.5mA

60mA

LY61L256(E)

-20 ~ 80℃

3.0 ~ 3.6V

12/15ns

0.5mA

50/40mA

LY61L256(I)

-40 ~ 85℃

3.15 ~ 3.6V

10ns

0.5mA

60mA

LY61L256(I)

-40 ~ 85℃

3.0 ~ 3.6V

12/15ns

0.5mA

50/40mA

LY61L256(LL)

0 ~ 70℃

3.15 ~ 3.6V

10ns

1

μA(LL)

60mA

LY61L256(LL)

0 ~ 70℃

3.0 ~ 3.6V

12/15ns

1

μA(LL)

50/40mA

LY61L256(LLE)

-20 ~ 80℃

3.15 ~ 3.6V

10ns

1

μA(LL)

60mA

LY61L256(LLE)

-20 ~ 80℃

3.0 ~ 3.6V

12/15ns

1

μA(LL)

50/40mA

LY61L256(LLI)

-40 ~ 85℃

3.15 ~ 3.6V

10ns

1

μA(LL)

60mA

LY61L256(LLI)

-40 ~ 85℃

3.0 ~ 3.6V

12/15ns

1

μA(LL)

50/40mA