FQA11N90-F109 datasheet(3/8 Pages) FAIRCHILD

Part #	FQA11N90-F109

Description	N-Channel QFET짰 MOSFET 900 V, 11.4 A, 960 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FQA11N90_F109 Rev. C1

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3

0.2

0.4

0.6

0.8

1.0

1.2

10

-1

10

0

10

1

150℃

※

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

8

16

24

32

40

0.4

0.8

1.2

1.6

2.0

V

GS = 20V

V

GS = 10V

※

Note : T

J = 25℃

I

D, Drain Current [A]

24

6

8

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

※

Notes :

1. V

DS = 50V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

※

Notes :

1. 250μ s Pulse Test

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

0

1020

30

4050

6070

80

0

2

4

6

8

10

12

V

DS = 450V

V

DS = 180V

V

DS = 720V

※

Note : I

D = 11.4 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※

Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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