Parameter

Max.

Units

Drain- Source Voltage

-20

V

-2.2

-1.8

A

Pulsed Drain Current



-9.0

Power Dissipation

0.96

Power Dissipation

0.62

Linear Derating Factor

7.7

mW/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

1/13/03

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

130

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

IRF5850

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where

printed circuit board space is at a premium and where

maximum

functionality is required. With two die per

package, the IRF5850 can provide the functionality of two

SOT-23 packages in a smaller footprint. Its unique thermal

current-handling capability.

Description

PD - 93947A

TSOP-6

Top View