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TXDV1212 Datasheet(PDF) 2 Page - STMicroelectronics |
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TXDV1212 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page  Characteristics TXDVxx12 2/7 Doc ID 18272 Rev 2 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current (180° conduction angle) Tc = 90 °C 12 A VDRM VRRM Repetitive peak off-state voltage TXDV812 Tj = 125 °C 800 V TXDV1212 1200 ITSM Non repetitive surge peak on-state current tp = 2.5 ms Tj = 25 °C 170 A tp = 8.3 ms 125 tp = 10 ms 120 I2tI2t value for fusing tp = 10 ms 72 A2S dI/dt Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/µs F = 50 Hz 100 A/µs Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VINS(RMS) (1) Insulation rms voltage 2500 V 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit TXDV812 TXDV1212 IGT VD = 12 V DC, RL = 33 Ω I-II-III MAX. 100 mA VGT I-II-III MAX. 1.5 V VGD VD = VDRM RL = 3.3 kΩ Tj = 110 °C I-II-III MIN. 0.2 V tgt VD = VDRM IG = 500 mA dIG/dt = 3 A/µs I-II-III TYP. 2.5 µs IL IG = 1.2 x IGT I-III TYP. 100 mA II 200 IH (1) IT = 500 mA Gate open MAX. 100 mA dV/dt (1) Linear slope up to: VD = 67% VDRM Gate open Tj = 125 °C MIN. 2 kV/µs (dI/dt)c (1) (dV/dt)c = 10 V/µs Tj = 110 °C MIN. 42.5 30 A/ms VTM (1) ITM = 17 A tp = 380 µs MAX. 1.95 V Vto (1) Threshold voltage MAX. 1.21 V Rd (1) Dynamic resistance MAX. 40 m Ω IDRM IRRM VDRM = VRRM Tj = 25 °C MAX. 0.01 mA Tj = 110 °C 2 5 1. For either polarity of electrode A2 voltage with reference to electrode A1. |
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Similar Description - TXDV1212 |
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