DS16EV5110

SNLS249M – FEBRUARY 2007 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

-0.5V to +4.0V

LVCMOS Input Voltage

-0.5V + 4.0V

LVCMOS Output Voltage

-0.5V to 4.0V

CML Input/Output Voltage

-0.5V to 4.0V

Junction Temperature

+150°C

Storage Temperature

-65°C to +150°C

Lead Temperature (Soldering, 5 sec.)

+260°C

HBM, 1.5 k

Ω, 100 pF

>8 kV

ESD Rating

CML Inputs

>10 kV

Thermal Resistance

30°C/W

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute

Maximum Numbers are ensured for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating

Voltages only.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

Recommended Operating Conditions

(1) (2)

Min

Typ

Max

Units

3.0

3.3

3.6

V

Ambient Temperature

-40

25

+85

°C

(1)

time of product characterization and are not ensured.

(2)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.

Electrical Characteristics

Over recommended operating supply and temperature ranges unless other specified.

(1) (2)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

LVCMOS DC SPECIFICATIONS

High Level Input Leakage Current

LVCMOS pins with internal pull-up

-10

+10

μA

resistors

High Level Input Leakage Current

LVCMOS pins with internal pull-

80

105

μA

down resistors

Low Level Input Leakage Current

LVCMOS pins with internal pull-up

-20

-10

μA

resistors

Low Level Input Leakage Current

LVCMOS pins with internal pull-

-10

+10

μA

down resistors

High Level Input Voltage

2.0

VDD

V

Low Level Input Voltage

0

0.8

V

High Level Output Voltage

2.4

V

Low Level Output Voltage

0.4

V

POWER

PD

Power Dissipation

EN = High, Device Enabled

475

700

mW

EN = Low, Power Down Mode

70

mW

(1)

time of product characterization and are not ensured.

(2)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.

4

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