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BUF602IDBVTG4 Datasheet(PDF) 6 Page - Texas Instruments |
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BUF602IDBVTG4 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 27 page ELECTRICAL CHARACTERISTICS: VS = +3.3V BUF602 SBOS339B – OCTOBER 2005 – REVISED MAY 2008 ...................................................................................................................................................... www.ti.com Boldface limits are tested at +25 °C. At RL = 100Ω, unless otherwise noted. BUF602ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ PARAMETER CONDITIONS +25 °C +25 °C(2) 70 °C(3) +85 °C(3) UNITS MAX TEST LEVEL (1) AC PERFORMANCE Bandwidth VO = 500mVPP 600 320 320 310 MHz min B Full Power Bandwidth VO = 1VPP 520 MHz typ C Bandwidth for 0.1dB Flatness VO = 500mVPP 110 MHz typ C Slew Rate VO = 1.4V Step 800 650 600 600 V/ µs min B Rise Time and Fall Time VO = 0.2V Step 580 1100 1100 1150 ps max B Settling Time to 0.05% VO = 1V Step 6.5 ns typ C Harmonic Distortion VO = 1VPP, 5MHz 2nd-Harmonic RL = 100Ω –59 –49 –49 –48 dBc max B RL = 500Ω –76 –61 –57 –53 dBc max B 3rd-Harmonic RL = 100Ω –70 –51 –48 –44 dBc max B RL = 500Ω –63 –51 –48 –44 dBc max B Input Voltage Noise f > 100kHz 4.9 5.2 5.7 6.1 nV/ √Hz max B Input Current Noise f > 100kHz 2.2 2.7 2.8 2.9 pA/ √Hz max B BUFFER DC PERFORMANCE (4) Maximum Gain RL = 500Ω 0.99 1 1 1 V/V max A Minimum Gain RL = 500Ω 0.99 0.98 0.98 0.98 V/V min A Input Offset Voltage ±16 ±30 ±36 ±38 mV max A Average Input Offset Voltage Drift ±125 ±125 µV/°C max B Input Bias Current ±3 ±7 ±8 ±8.5 µA max A Average Input Bias Current Drift ±20 ±20 nA/ °C max B BUFFER INPUT Input Impedance 1.0 || 2.1 M Ω || pF typ C BUFFER OUTPUT Most Positive Output Voltage RL = 100Ω +2.1 +2.0 +2.0 +2.0 V min B RL = 500Ω +2.3 +2.2 +2.2 +2.2 V min A Least Positive Output Voltage RL = 100Ω +1.2 +1.3 +1.3 +1.3 V max B RL = 500Ω +1.0 +1.1 +1.1 +1.1 V max A Output Current (Continuous) VO = 0 ±60 ±50 ±49 ±48 mA min A Peak Output Current ±100 mA typ C Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C MID-POINT REFERENCE OUTPUT Maximum Mid-Supply Reference Voltage 1.65 1.72 1.72 1.72 V max A Minimum Mid-Supply Reference Voltage 1.65 1.58 1.58 1.58 V min A Mid-Supply Output Current, Sourcing 500 µA typ C Mid-Supply Output Current, Sinking 60 µA typ C Mid-Supply Output Impedance 200 Ω typ C POWER SUPPLY Specified Operating Voltage +3.3 V typ C Maximum Operating Voltage +12.6 +12.6 +12.6 V max A Minimum Operating Voltage +2.8 +2.8 +2.8 V min B Maximum Quiescent Current VS = +3.3V 5.0 5.5 6.0 6.3 mA max A Minimum Quiescent Current VS = +3.3V 5.0 4.5 4.2 3.8 mA min A Power-Supply Rejection Ratio (+PSRR) 50 44 42 41 dB min A (1) Test levels: (A) 100% tested at +25 °C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25 °C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +2 °C at high temperature limit for over temperature specifications. (4) Current is considered positive out of node. 6 Submit Documentation Feedback Copyright © 2005–2008, Texas Instruments Incorporated Product Folder Link(s): BUF602 |
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