7

8

9

10

11

12

2

OUT

36

37

38

39

19

34

35

32

33

29

30

31

NC

Dwg. PP-059-2

13

14

15

16

17

Designed primarily for use with vacuum-fluorescent displays, the

UCN5818AF and UCN5818EPF smart power BiMOS II drivers combine

CMOS shift registers, data latches, and control circuitry, with bipolar high-

speed sourcing outputs and DMOS active pull-down circuitry. The high-

speed shift register and data latches allow direct interfacing with microproces-

sor LSI-based systems. A CMOS serial data output enables cascade connec-

tions in applications requiring additional drive lines. Both devices feature

60 V and -40 mA output ratings, allowing them to be used in many other

peripheral power driver applications.

These smart power drivers have been designed with BiMOS II logic for

improved data entry rates. With a 5 V supply, it will operate to at least 3.3

MHz. At 12 V, higher speeds are possible. Use of these devices with TTL

may require the use of appropriate pull-up resistors to ensure an input logic

high. All devices can be operated over the ambient temperature range of -

20

°C to +85°C. The UCN5818AF is supplied in a 40-pin plastic dual in-line

package with 0.600" (15.24 mm) row spacing. A copper lead frame, reduced

supply current requirement, and low output saturation voltage permits

operation with minimum junction temperature rise. The ‘A’ package allows

all 32 outputs to be operated at -25 mA continuously over the operating

temperature range.

For high-density packaging applications, the UCN5818EPF is furnished

in a 44-lead plastic chip carrier (quad pack) for surface mounting on solder

lands with 0.050" (1.27 mm) centers. The PLCC allows -25 mA continuous

operation of all outputs simultaneously at ambient temperatures to 60

°C.

Similar devices are available as the UCN5810AF/LWF (10 bits), UCN5811A

(12 bits), and UCN5812AF/EPF (20 bits).

UCN5818EPF

BiMOS II 32-BIT SERIAL-INPUT, LATCHED

SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

Always order by complete part number, e.g., UCN5818EPF .

FEATURES

I 60 V Source Outputs

I High-Speed Source Drivers

I To 3.3 MHz Data Input Rate

I Low-Output Saturation Voltages

I Active DMOS Pull-Downs

I Low-Power CMOS Logic

and Latches

I Reduced Supply Current

Requirements

I Improved Replacements for

SN75518N/FN

ABSOLUTE MAXIMUM RATINGS

Continuous Output Current,

Input Voltage Range,

(UCN5818AF) ............................ 3.5 W*

(UCN5818EPF) ......................... 2.7 W†

Operating Temperature Range,

Storage Temperature Range,

* Derate at rate of 28 mW/

† Derate at rate of 22 mW/

Caution: CMOS devices have input static

protection but are susceptible to damage when

exposed to extremely high static electrical

charges.

5818-F