__VSS2

__ MSS

__ VDD2

__ MBE

__ BUSYZ

__ SCRUBZ

__ VSS1

__ VDD2

__ E2

__ GZ

__ E1Z

__ A16

__ A15

__ A14

__ A13

__ A12

__ A11

__ VDD1

__ VDD1

VDD1 __

VDD1 __

A10 __

A9 __

A8 __

A7 __

A6 __

WZ __

A18 __

VSS1 __

A17 __

A5 __

A4 __

A3 __

A2 __

A1 __

A0 __

VSS2 __

VSS2 __

20

38

58

76

°

°

°

o

o

o

o

o

•

•

•

•

o

o

•

°

•

•

Memory Array

512Kx32

I/OCircuit

ColumnDecoder

EDAC

Read/Write

Circuit

DQ(31:0)

A7

A8

A9

A10

A11

A12

A13

A14

A15

A16

A0 A1 A2 A3 A4 A5 A6 A17 A18

WZ

E1Z

E2

GZ

o

MBE

BUSYZ

SCRUBZ

SMV512K32-SP

SLVSA21H – JUNE 2011 – REVISED JULY 2013

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

Figure 1. SMV512K32 Block Diagram

Figure 2. SMV512K32 Pin Out

2

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Product Folder Links: SMV512K32-SP