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MMDT2222A Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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MMDT2222A Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 1 page  WEJ ELECTRONIC CO.,LTD MMDT2222A TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25 ℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 75 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10 µA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10 µA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0. 01 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0. 01 µA hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 300 hFE(5) VCE=10V, IC= 500mA 40 DC current gain hFE(6) VCE=1V, IC= 150mA 35 VCE(sat)1 IC=150 mA, IB= 15mA 0.3 V Collector-emitter saturation voltage VCE(sat)2 IC=500 mA, IB= 50mA 1 V VBE(sat)1 IC=150 mA, IB=15mA 0.6 1.2 V Base-emitter saturation voltage VBE(sat)2 IC=500 mA, IB= 50mA 2 V Transition frequency fT VCE=20V, IC= 20mA f=100MHz 300 MHz Output Capacitance Cob VCB=10V, IE= 0 f=1MHz 8 pF Input Capacitance Cib VEB=0.5V, IC= 0 f=1MHz 25 pF Noise Figure NF VCE=10V, IC=100µA f=1KHz,Rs=1KΩ 4 dB Delay time td 10 nS Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V, IB1=15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1= IB2= 15mA 60 nS Marking :K1P MMDT2222A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
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