MMDT5551 datasheet(1/1 Pages) WINNERJOIN

Part #	MMDT5551

Description	Multi-Chip TRANSISTOR (NPN)

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Manufacturer	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

Direct Link	http://www.wej.cn

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WEJ

ELECTRONIC

CO.,LTD

MMDT5551 Multi-Chip TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

0.2

W (Tamb=25

℃)

Collector current

ICM:

0.2

A

Collector-base voltage

V(BR)CBO:

180

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

180

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA, IB=0

160

V

Emitter-base breakdown voltage

V(BR)EBO

IE=

10µA, IC=0

6

V

Collector cut-off current

ICBO

VCB=

120V, IE=0

50

nA

Emitter cut-off current

IEBO

VEB=

4V, IC=0

50

nA

hFE(1)

VCE=

5V, IC=1mA

80

hFE(2)

VCE=

5V, IC=10mA

80

250

DC current gain

hFE(3)

VCE=

5V, IC=50mA

30

VCE(sat)(1)

IC=

10mA, IB=1mA

0.15

V

Collector-emitter saturation voltage

VCE(sat)(2)

IC=

50mA, IB=5mA

0.2

V

VBE(sat)(1)

IC=

10mA, IB=1mA

1

V

Base-emitter saturation voltage

VBE(sat)(2)

IC=

50mA, IB=5mA

1

V

Transition frequency

fT

VCE=

10V, IC=10mA, f=100MHz

100

300

MHz

Collector output capacitance

Cob

VCB=

10V, IE=0, f=1MHz

6

pF

Noise figure

NF

VCE=

5V, Ic=200µA,

f=

1KHz, Rg=1KΩ

8

dB

CLASSIFICATION OF hFE(1)

Marking

K4N

SOT-363

MMDT5551

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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