MMBT3904WT1 datasheet(3/12 Pages) ONSEMI

Part #	MMBT3904WT1

Description	General Purpose Transistors NPN and PNP Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

MMBT3904WT1, SMMBT3904WT1

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

MMBT3906WT1

fT

300

250

−

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

MMBT3904WT1, SMMBT3904WT1

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)

MMBT3906WT1

Cobo

−

4.0

4.5

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

MMBT3904WT1, SMMBT3904WT1

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)

MMBT3906WT1

Cibo

−

8.0

10.0

pF

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

MMBT3906WT1

hie

1.0

2.0

10

12

k W

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

MMBT3906WT1

hre

0.5

0.1

8.0

10

X 10−4

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

MMBT3906WT1

hfe

100

400

−

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)

MMBT3906WT1

hoe

1.0

3.0

40

60

mmhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1

(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)

MMBT3906WT1

NF

−

5.0

4.0

dB

SWITCHING CHARACTERISTICS

Characteristic

Condition

Symbol

Min

Max

Unit

Delay Time

(VCC = 3.0 Vdc, VBE = −0.5 Vdc)

MMBT3904WT1, SMMBT3904WT1

(VCC = −3.0 Vdc, VBE = 0.5 Vdc)

MMBT3906WT1

td

−

35

ns

Rise Time

(IC = 10 mAdc, IB1 = 1.0 mAdc)

MMBT3904WT1, SMMBT3904WT1

(IC = −10 mAdc, IB1 = −1.0 mAdc)

MMBT3906WT1

tr

−

35

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc)

MMBT3904WT1, SMMBT3904WT1

(VCC = −3.0 Vdc, IC = −10 mAdc)

MMBT3906WT1

ts

−

200

225

ns

Fall Time

(IB1 = IB2 = 1.0 mAdc)

MMBT3904WT1, SMMBT3904WT1

(IB1 = IB2 = −1.0 mAdc)

MMBT3906WT1

tf

−

50

75

MMBT3904WT1, SMMBT3904WT1

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916

CS < 4 pF*

+3 V

275

10 k

CS < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V

+10.9 V

DUTY CYCLE = 2%

t1

0

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

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