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A3189LUA Datasheet(PDF) 4 Page - Allegro MicroSystems |
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A3189LUA Datasheet(HTML) 4 Page - Allegro MicroSystems |
4 / 8 page 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 SENSOR LOCATIONS ( ±0.005” [0.13 mm] die placement) Package Designators “LT” 1 3 2 Dwg. MH-008-4B 0.030" 0.76 mm NOM ACTIVE AREA DEPTH 0.050" 1.27 mm 0.090" 2.27 mm A Package Designator “U” 1 3 2 Dwg. MH-002-7B 0.015" 0.38 mm NOM BRANDED SURFACE ACTIVE AREA DEPTH 0.077" 1.96 mm 0.092" 2.33 mm A Package Designators “UA” and "UA-TL" 1 3 2 Dwg. MH-011-4B 0.018" 0.46 mm NOM BRANDED SURFACE ACTIVE AREA DEPTH 0.083" 2.10 mm 0.060" 1.51 mm A The simplest form of magnet that will operate these devices is a ring magnet, as shown below. Other methods of operation are possible. Dwg. A-11,899 OPERATION In operation, the output transistor is OFF until the strength of the mag- netic field perpendicular to the surface of the chip exceeds the threshold or operate point (BOP). When the field strength exceeds BOP, the output transis- tor switches ON and is capable of sinking 25 mA of current. The output transistor switches OFF when magnetic field reversal results in a magnetic flux density below the OFF threshold (BRP). This is illustrated in the transfer characteristics graph (A3187* shown). Note that the device latches; that is, a south pole of sufficient strength will turn the device ON. Removal of the south pole will leave the device ON. The presence of a north pole of sufficient strength is required to turn the device OFF. APPLICATIONS INFORMATION Extensive applications information on magnets and Hall-effect sensors is also available in the Allegro Integrated and Discrete Semiconductors Data Book or Application Note 27701. 30 V MAX 0+B 0 FLUX DENSITY Dwg. GH-034-4 -B RP B VOUT(SAT) BB V OP B Although sensor location is accurate to three sigma for a particular design, product improve- ments may result in small changes to sensor location. |
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