MTP3N50E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 0.25 mA)

V(BR)DSS

500

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 500 V, VGS = 0)

(VDS = 400 V, VGS = 0, TJ = 125°C)

IDSS

—

—

—

—

0.25

1.0

mAdc

Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

—

—

100

nAdc

Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

—

—

100

nAdc

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

(TJ = 125°C)

VGS(th)

2.0

1.5

—

—

4.0

3.5

Vdc

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)

RDS(on)

—

2.4

3.0

Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 3.0 A)

(ID = 1.5 A, TJ = 100°C)

VDS(on)

—

—

—

—

10

8.0

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)

gFS

1.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Ciss

—

435

—

pF

Output Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Coss

—

56

—

Transfer Capacitance

f = 1.0 MHz)

Crss

—

9.2

—

SWITCHING CHARACTERISTICS*

Turn–On Delay Time

(VDD = 250 V, ID ≈ 3.0 A,

RG = 18 Ω, RL = 83 Ω,

VGS(on) = 10 V)

td(on)

—

14

—

ns

Rise Time

(VDD = 250 V, ID ≈ 3.0 A,

RG = 18 Ω, RL = 83 Ω,

VGS(on) = 10 V)

tr

—

14

—

Turn–Off Delay Time

RG = 18 Ω, RL = 83 Ω,

VGS(on) = 10 V)

td(off)

—

30

—

Fall Time

GS(on) = 10 V)

tf

—

20

—

Total Gate Charge

(VDS = 400 V, ID = 3.0 A,

VGS = 10 V)

Qg

—

15

21

nC

Gate–Source Charge

(VDS = 400 V, ID = 3.0 A,

VGS = 10 V)

Qgs

—

2.5

—

Gate–Drain Charge

VGS = 10 V)

Qgd

—

10

—

SOURCE–DRAIN DIODE CHARACTERISTICS*

Forward On–Voltage

(IS = 3.0 A)

VSD

—

—

1.5

Vdc

Forward Turn–On Time

(IS = 3.0 A, di/dt = 100 A/µs)

ton

—

**

—

ns

Reverse Recovery Time

(IS = 3.0 A, di/dt = 100 A/µs)

trr

—

200

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

Ld

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

Ls

—

7.5

—

* Indicates Pulse Test: Pulse Width = 300

µs Max, Duty Cycle ≤ 2.0%.

** Limited by circuit inductance.