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MTP3N50E Datasheet(PDF) 2 Page - Motorola, Inc |
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MTP3N50E Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 8 page MTP3N50E 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 500 — — Vdc Zero Gate Voltage Drain Current (VDS = 500 V, VGS = 0) (VDS = 400 V, VGS = 0, TJ = 125°C) IDSS — — — — 0.25 1.0 mAdc Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF — — 100 nAdc Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR — — 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) (TJ = 125°C) VGS(th) 2.0 1.5 — — 4.0 3.5 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc) RDS(on) — 2.4 3.0 Ohm Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 3.0 A) (ID = 1.5 A, TJ = 100°C) VDS(on) — — — — 10 8.0 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc) gFS 1.0 — — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss — 435 — pF Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss — 56 — Transfer Capacitance f = 1.0 MHz) Crss — 9.2 — SWITCHING CHARACTERISTICS* Turn–On Delay Time (VDD = 250 V, ID ≈ 3.0 A, RG = 18 Ω, RL = 83 Ω, VGS(on) = 10 V) td(on) — 14 — ns Rise Time (VDD = 250 V, ID ≈ 3.0 A, RG = 18 Ω, RL = 83 Ω, VGS(on) = 10 V) tr — 14 — Turn–Off Delay Time RG = 18 Ω, RL = 83 Ω, VGS(on) = 10 V) td(off) — 30 — Fall Time GS(on) = 10 V) tf — 20 — Total Gate Charge (VDS = 400 V, ID = 3.0 A, VGS = 10 V) Qg — 15 21 nC Gate–Source Charge (VDS = 400 V, ID = 3.0 A, VGS = 10 V) Qgs — 2.5 — Gate–Drain Charge VGS = 10 V) Qgd — 10 — SOURCE–DRAIN DIODE CHARACTERISTICS* Forward On–Voltage (IS = 3.0 A) VSD — — 1.5 Vdc Forward Turn–On Time (IS = 3.0 A, di/dt = 100 A/µs) ton — ** — ns Reverse Recovery Time (IS = 3.0 A, di/dt = 100 A/µs) trr — 200 — INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 ″ from package to center of die) Ld — — 3.5 4.5 — — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) Ls — 7.5 — * Indicates Pulse Test: Pulse Width = 300 µs Max, Duty Cycle ≤ 2.0%. ** Limited by circuit inductance. |
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