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NTB5426NT4G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTB5426NT4G
Description  Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTB5426NT4G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
Publication Order Number:
NTB5426N/D
NTB5426N, NTP5426N,
NVB5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC Q101 Qualified − NVB5426N
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
VGS
30
V
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TC = 25°C
ID
120
A
TC = 100°C
85
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
PD
215
W
Pulsed Drain Current
tp = 10 ms
IDM
260
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Source Current (Body Diode)
IS
60
A
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A,
L = 0.3 mH, RG = 25 W)
EAS
735
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case (Drain)
Steady State (Note 1)
RqJC
0.7
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW
= Work Week
5426N
AYWW
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
4
D2PAK
CASE 418B
STYLE 2
5426N
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
V(BR)DSS
RDS(ON) MAX
ID MAX
(Note 1)
60 V
6.0 mW @ 10 V
120 A
N−Channel
D
S
G


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