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NTMD6N03R2 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTMD6N03R2
Description  Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMD6N03R2 Datasheet(HTML) 2 Page - ON Semiconductor

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NTMD6N03R2, NVMD6N03R2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
(VGS =0 Vdc, ID = 250 mA)
Temperature Coefficient (Positive)
V(BR)DSS
30
--
--
30
--
--
Vdc
mV/C
Zero Gate Voltage Drain Current
(VDS =24 Vdc, VGS =0 Vdc, TJ =25C)
(VDS =24 Vdc, VGS =0 Vdc, TJ = 125C)
IDSS
--
--
--
--
1.0
20
mAdc
Gate--Body Leakage Current
(VGS = 20 Vdc, VDS =0 Vdc)
IGSS
--
--
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS =VGS,ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
--
1.8
4.6
2.5
--
Vdc
mV/C
Static Drain--to--Source On--State Resistance
(VGS =10 Vdc, ID =6 Adc)
(VGS =4.5 Vdc, ID =3.9 Adc)
RDS(on)
--
--
0.024
0.030
0.032
0.040
Ω
Forward Transconductance
(VDS =15 Vdc, ID =5.0 Adc)
gFS
--
10
--
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS =24 Vdc, VGS =0 Vdc,
f= 1.0MHz)
Ciss
--
680
950
pF
Output Capacitance
Coss
--
210
300
Reverse Transfer Capacitance
Crss
--
70
135
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn--On Delay Time
(VDD =15 Vdc, ID =1 A,
VGS =10 V,
RG =6 Ω)
td(on)
--
9
18
ns
Rise Time
tr
--
22
40
Turn--Off Delay Time
td(off)
--
45
80
Fall Time
tf
--
45
80
Turn--On Delay Time
(VDD =15 Vdc, ID =1 A,
VGS =4.5 V,
RG =6 Ω)
td(on)
--
13
30
ns
Rise Time
tr
--
27
50
Turn--Off Delay Time
td(off)
--
22
40
Fall Time
tf
--
34
70
Gate Charge
(VDS =15 Vdc,
VGS =10 Vdc,
ID =5 A)
QT
--
19
30
nC
Q1
--
2.4
--
Q2
--
5.0
--
Q3
--
4.3
--
BODY--DRAIN DIODE RATINGS (Note 3)
Diode Forward On--Voltage
(IS =1.7 Adc, VGS =0 V)
(IS =1.7 Adc, VGS =0 V, TJ = 150C)
VSD
--
--
0.75
0.62
1.0
--
Vdc
Reverse Recovery Time
(IS =5 A, VGS =0 V,
dIS/dt = 100 A/ms)
trr
--
26
--
ns
ta
--
11
--
tb
--
15
--
Reverse Recovery Stored Charge
(IS =5 A, dIS/dt = 100 A/ms, VGS =0 V)
QRR
--
0.015
--
mC
3. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.
4. Switching characteristics are independent of operating junction temperature.


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