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A3195ELT Datasheet(PDF) 5 Page - Allegro MicroSystems |
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A3195ELT Datasheet(HTML) 5 Page - Allegro MicroSystems |
5 / 10 page 3195 PROTECTED, HIGH-TEMP., ACTIVE PULL-DOWN HALL-EFFECT LATCH OPERATION In operation, the output transistor is OFF until the strength of the magnetic field perpendicular to the surface of the chip exceeds the threshold or operate point (BOP). When the field strength exceeds BOP, the output transistor switches ON (a logic low) and is capable of sinking 35 mA of current. The output transistor switches OFF (a logic high) when magnetic field reversal results in a magnetic flux density below the OFF threshold (BRP). This is illustrated in the transfer characteristics graph. Note that the device latches; that is, a south pole of sufficient strength will turn the device ON. Removal of the south pole will leave the device ON. The presence of a north pole of sufficient strength is required to turn the device OFF. The switch points increase in sensitivity with increasing temperature to compensate for the typical ferrite magnet temperature characteristic. The simplest form of magnet that will operate these devices is a ring magnet. Other methods of operation are possible. TEST CIRCUIT AND TYPICAL APPLICATION An external 0.1 µF to 0.47 µF capacitor, with good high-frequency characteristics, should be connected between terminals 1 and 2 to bypass high-voltage noise and reduce EMI susceptibility. Internal Pull-Down Resistor. An internal pull-down resistor (nominal 15 k Ω) is provided to allow testing of the device without the need for an external load. 3.8 V TO 26 V WITH TRANSIENTS VCC Dwg. EH-007 L R TO µP L C 3 X BYPASS C 2 1 025 50 75 100 20 10 AMBIENT TEMPERATURE IN °C 18 14 -50 Dwg. GH-060 150 -25 125 16 12 |
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