NTB75N03L09T4 datasheet(1/8 Pages) ONSEMI

Part #	NTB75N03L09T4

Description	Power MOSFET 75 Amps, 30 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2013 − Rev. 13

1

Publication Order Number:

NTD2955/D

NTD2955, NVD2955

Power MOSFET

−60 V, −12 A, P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low−voltage, high−

speed switching applications in power supplies, converters, and power

motor controls. These devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer an additional safety margin against unexpected

voltage transients.

Features

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Designed for Low−Voltage, High−Speed Switching Applications and

to Withstand High Energy in the Avalanche and Commutation Modes

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−60

Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms)

VGS

VGSM

± 20

± 25

Vdc

Vpk

Drain Current

Drain Current − Continuous @ Ta = 25°C

Drain Current − Single Pulse (tp ≤ 10 ms)

ID

IDM

−12

−18

Adc

Apk

Total Power Dissipation @ Ta = 25°C

PD

55

W

Operating and Storage Temperature

Range

TJ, Tstg

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak

IL = 12 Apk, L = 3.0 mH, RG = 25 W)

EAS

216

mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

RqJC

RqJA

2.73

71.4

100

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8 in. from case for

10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in pad size

(Cu area = 1.127 in2).

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu area = 0.412 in2).

D

S

G

P−Channel

http://onsemi.com

−60 V

155 mW @ −10 V, 6 A

RDS(on) TYP

−12 A

ID MAX

V(BR)DSS

Y

= Year

WW = Work Week

G

= Pb−Free Package

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369C

STYLE 2

MARKING DIAGRAMS

1 2

3

4

DPAK−3

CASE 369D

STYLE 2

1

2

3

4

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

Gate

3

Source

2

Drain

4

Drain

1

Gate

3

Source

2

Drain

4

Drain

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