NSS40200LT1G datasheet(3/6 Pages) ONSEMI

Part #	NSS40200LT1G

Description	40 V, 4.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD2955, NVD2955

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−To−Source Leakage

Current versus Voltage

0

1

2

345

0

15

25

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

24

6

8

10

0

10

18

24

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VDS ≥ −10 V

TJ = -55°C

25

°C

125

°C

VGS = -10 V

-9 V

-8 V

-6 V

-5 V

-7 V

5

10

20

35

7

9

4

12

22

67

8

9

10

16

6

03

6

15

24

0

0.10

0.20

0.30

0

6

21

24

0.050

0.075

0.200

0.250

−ID, DRAIN CURRENT (AMPS)

-

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

VGS = −10 V

TJ = 125°C

25

°C

-55

°C

12

21

3

12

15

0.05

0.15

0.25

0.100

0.225

0.125

VGS = −10 V

-

15 V

18

9

0.35

0.40

0.175

918

0.150

-50

0.6

0.8

1.2

1.6

520

50

60

1

100

1000

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

-25

0

25

50

75

100

125

150

VGS = 0 V

VGS = −10 V

ID = −6 A

15

30

40

1.0

1.4

TJ = 125°C

175

0.4

0.2

0

1.8

2.0

100

°C

-6.5 V

-5.5 V

-9.5 V

8

2

20

14

0.45

0.50

10

25

55

35

45

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