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TO-251 Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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TO-251 Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 1 page WEJ ELECTRONIC CO.,LTD 2SA1700 TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25 ℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=- 10µA, IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO Ic=- 1mA, IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-300V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-10V, IC=-50mA 60 200 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1 V Transition frequency fT VCE=-30V, IC=-10mA 70 MHz CLASSIFICATION OF hFE(1) Rank D E Range 60-120 100-200 1 2 3 TO-251 1. BASE 2. COLLECTOR 3. EMITTER 2SA1700 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
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