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CAT93C86WI-GT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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CAT93C86WI-GT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 10 page CAT93C86 http://onsemi.com 2 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Temperature Under Bias −55 to +125 °C Storage Temperature −65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) −2.0 to +VCC +2.0 V VCC with Respect to Ground −2.0 to +7.0 V Package Power Dissipation Capability (TA = 25°C) 1.0 W Lead Soldering Temperature (10 seconds) 300 °C Output Short Circuit Current (Note 2) 100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns. 2. Output shorted for no more than one second. No more than one output shorted at a time. Table 2. RELIABILITY CHARACTERISTICS Symbol Parameter Reference Test Method Min Units NEND (Note 3) Endurance MIL−STD−883, Test Method 1033 1,000,000 Cycles/Byte TDR (Note 3) Data Retention MIL−STD−883, Test Method 1008 100 Years VZAP (Note 3) ESD Susceptibility MIL−STD−883, Test Method 3015 2000 V ILTH (Notes 3, 4) Latch−Up JEDEC Standard 17 100 mA 3. These parameters are tested initially and after a design or process change that affects the parameter. 4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to VCC +1 V. Table 3. D.C. OPERATING CHARACTERISTICS (VCC = +1.8 V to +5.5 V unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max Units ICC1 Power Supply Current (Write) fSK = 1 MHz; VCC = 5.0 V 3 mA ICC2 Power Supply Current (Read) fSK = 1 MHz; VCC = 5.0 V 500 mA ISB1 Power Supply Current (Standby) (x8 Mode) CS = 0 V ORG = GND 10 mA ISB2 Power Supply Current (Standby) (x16 Mode) CS = 0 V ORG = Float or VCC 0 10 mA ILI Input Leakage Current VIN = 0 V to VCC 1 mA ILO Output Leakage Current (Including ORG pin) VOUT = 0 V to VCC, CS = 0 V 1 mA VIL1 Input Low Voltage 4.5 V ≤ VCC < 5.5 V −0.1 0.8 V VIH1 Input High Voltage 4.5 V ≤ VCC < 5.5 V 2 VCC + 1 V VIL2 Input Low Voltage 1.8 V ≤ VCC < 4.5 V 0 VCC x 0.2 V VIH2 Input High Voltage 1.8 V ≤ VCC < 4.5 V VCC x 0.7 VCC + 1 V VOL1 Output Low Voltage 4.5 V ≤ VCC < 5.5 V; IOL = 2.1 mA 0.4 V VOH1 Output High Voltage 4.5 V ≤ VCC < 5.5 V; IOH = −400 mA 2.4 V VOL2 Output Low Voltage 1.8 V ≤ VCC < 4.5 V; IOL = 1 mA 0.2 V VOH2 Output High Voltage 1.8 V ≤ VCC < 4.5 V; IOH = −100 mA VCC − 0.2 V |
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