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DZ2J120M0L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DZ2J120M0L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 5 page Product Standards Zener Diode DZ2J120 0L Absolute Maximum Ratings Ta = 25 C *1 Mounted on glass epoxy print board ( 45 mm 45 mm 1 mm ) Solder in ( Recommended land pattern ) *2 Test method : IEC61000_4_2 ( C = 150 pF, R = 330 , Contact discharge : 10 times ) Electrical Characteristics Ta = 25 C 3 C Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. Absolute frequency of input and output is 5 MHz. The temperature must be controlled 25 C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25 C). VZ guaranted 20 ms after current flow Rank classification Tj = 25 C to 150 C Page *3 3. *1 *2 Note) Note) 1. 2. Temperature coefficient of zener voltage *3 80 Zener rise operating resistance RZK IZ = 0.5 mA Internal Connection 9.3 mV/ C V 30 11.40 Max 12.60 1.0 V Parameter Symbol Conditions Forward voltage VF IF = 10 mA Unit 1of 4 Unit: mm Min Typ SMini2-F5-B JEITA SC-90A 2. Anode Low zener operating resistance Rz Excellent rising characteristics of zener current Iz Halogen-free / RoHS compliant DZ2J120 0L Silicon epitaxial planar type For constant voltage / For surge absorption circuit Features (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: RJ or RU Code 1. Cathode ― Panasonic Parameter Symbol Rating Unit Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) SZ IZ = 5 mA Zener voltage *1, *2 VZ IZ = 5 mA Zener operating resistance RZ IZ = 5 mA Reverse current C Repetitive peak forward current IFRM 200 mA Storage temperature Tstg -55 to kV +150 +85 8 Total power dissipation *1 PT 200 Junction temperature Tj 150 Electrostatic discharge *2 mW Operating ambient temperature Topr -40 to C C ESD 0.05 A IR VR = 9 V 12.60 12.33 Marking symbol RU RJ VZ 11.73 to 11.40 to Code M 0 Rank M No-rank 1.25 0.7 0.13 0.35 0.5 2 1 1 2 Doc No. TT4-EA-11554 Revision. 3 Established : 2009-10-14 Revised : 2013-07-11 |
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