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MTP29N15E Datasheet(PDF) 1 Page - Motorola, Inc |
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MTP29N15E Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola TMOS Power MOSFET Transistor Device Data Product Preview TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 150 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 150 Vdc Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100 °C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 29 19 102 Adc Apk Total Power Dissipation Derate above 25 °C PD 125 1.0 Watts W/ °C Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 W) EAS 421 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Order this document by MTP29N15E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP29N15E TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM ® D S G N–Channel CASE 221A–06, TO–220AB © Motorola, Inc. 1997 |
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