BZT52H-B4V3 datasheet(4/13 Pages) PHILIPS

Part #	BZT52H-B4V3

Description	Single Zener diodes in a SOD123F package

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Manufacturer	PHILIPS [NXP Semiconductors]

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BZT52H_SER

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Product data sheet

Rev. 3 — 7 December 2010

4 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF =10mA

[1] --

0.9

V

Table 8.

Characteristics per type; BZT52H-B2V4 to BZT52H-C24

Tj =25 °C unless otherwise specified.

BZT52H

-xxx

Sel

Working

voltage

VZ (V);

IZ =5mA

Maximum differential

resistance rdif (Ω)

Reverse

current IR (μA)

Temperature

coefficient

SZ (mV/K);

IZ =5mA

Diode

capacitance

Cd (pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

Min

Max

IZ =1mA

IZ =5mA

Max

VR (V)

Min

Max

2V4

B

2.35

2.45

400

85

50

1

−3.5

0.0

450

6.0

C2.2

2.6

2V7

B

2.65

2.75

500

83

20

1

−3.5

0.0

450

6.0

C2.5

2.9

3V0

B

2.94

3.06

500

95

10

1

−3.5

0.0

450

6.0

C2.8

3.2

3V3

B

3.23

3.37

500

95

5

1

−3.5

0.0

450

6.0

C3.1

3.5

3V6

B

3.53

3.67

500

95

5

1

−3.5

0.0

450

6.0

C3.4

3.8

3V9

B

3.82

3.98

500

95

3

1

−3.5

0.0

450

6.0

C3.7

4.1

4V3

B

4.21

4.39

500

95

3

1

−3.5

0.0

450

6.0

C4.0

4.6

4V7

B

4.61

4.79

500

78

3

2

−3.5

0.2

300

6.0

C4.4

5.0

5V1

B

5.0

5.2

480

60

2

−2.7

1.2

300

6.0

C4.8

5.4

5V6

B

5.49

5.71

400

40

1

2

−2.0

2.5

300

6.0

C5.2

6.0

6V2

B

6.08

6.32

150

10

3

4

0.4

3.7

200

6.0

C5.8

6.6

6V8

B

6.66

6.94

80

8

2

4

1.2

4.5

200

6.0

C6.4

7.2

7V5

B

7.35

7.65

80

10

1

5

2.5

5.3

150

4.0

C7.0

7.9

8V2

B

8.04

8.36

80

10

0.7

5

3.2

6.2

150

4.0

C7.7

8.7

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