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250R18W474KV4E Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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250R18W474KV4E Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 2 page 14 www.johanson dielectrics.com HOW TO ORDER TANCERAM® P/N written: 250R18Y105ZV4E TAPE MODIFIER Code Type Reel E Plastic 7” T Paper 7” Tape specifications conform to EIA RS481 E MARKING 4 = Unmarked 4 TERMINATION V = Ni barrier w/ 100% Sn Plating V DIELECTRIC W = X7R X = X5R Y = Y5V Y CASE SIZE See Chart R18 VOLTAGE 500 = 50 V 250 = 25 V 160 = 16 V 100 = 10 V 6R3 = 6.3 V 250 CAPACITANCE 1st two digits are significant; third digit denotes number of zeros. 474 = 0.47 µF 105 = 1.00 µF 105 TOLERANCE Y5V Z = +80% -20% X7R/X5R K = ±10% M = ±20% Z TANCERAM® CHIP CAPACITORS TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because Tanceram® capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. Tancerams® high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. ADVANTAGES • Low ESR • Low DC Leakage • Higher Surge Voltage • Non-polarized Devices • Reduced CHIP Size • Improved Reliability • Higher Insulation Resistance • Higher Ripple Current APPLICATIONS • Switching Power Supply Smoothing (Input/Output) • Backlighting Inverters • DC/DC Converter Smoothing (Input/Output) • General Digital Circuits 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 Frequency (MHz) Typical ESR Comparison 1.0 μF / 16V Tantalum 1.0 μF / 16V TANCERAM ® 0% 25% 50% 75% 100% 0 100 200 300 400 500 DC Breakdown Voltage Typical Breakdown Voltage Comparison 1.0 μF / 16V Tantalum 1.0 μF / 16V TANCERAM ® |
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