NVD2955 datasheet(2/8 Pages) ONSEMI

Part #	NVD2955

Description	??0 V, ??2 A, P?묬hannel DPAK

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NTD2955, NTD2955P, NVD2955

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = −0.25 mA)

(Positive Temperature Coefficient)

V(BR)DSS

−60

−

67

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C)

(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C)

IDSS

−

−10

−100

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

−100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = −250 mAdc)

(Negative Temperature Coefficient)

VGS(th)

−2.0

−

−2.8

4.5

−4.0

−

Vdc

mV/°C

Static Drain−Source On−State Resistance

(VGS = −10 Vdc, ID = −6.0 Adc)

RDS(on)

−

0.155

0.180

W

Drain−to−Source On−Voltage

(VGS = −10 Vdc, ID = −12 Adc)

(VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C)

VDS(on)

−1.86

−

−2.6

−2.0

Vdc

Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)

gFS

8.0

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = −25 Vdc, VGS = 0 Vdc,

F = 1.0 MHz)

Ciss

−

500

750

pF

Output Capacitance

Coss

−

150

250

Reverse Transfer Capacitance

Crss

−

50

100

SWITCHING CHARACTERISTICS (Notes 3 and 4)

Turn−On Delay Time

(VDD = −30 Vdc, ID = −12 A,

VGS = −10 V, RG = 9.1 W)

td(on)

−

10

20

ns

Rise Time

tr

−

45

85

Turn−Off Delay Time

td(off)

−

26

40

Fall Time

tf

−

48

90

Gate Charge

(VDS = −48 Vdc, VGS = −10 Vdc,

ID = −12 A)

QT

−

15

30

nC

QGS

−

4.0

−

QGD

−

7.0

−

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)

Diode Forward On−Voltage

(IS = 12 Adc, VGS = 0 V)

(IS = 12 Adc, VGS = 0 V, TJ = 150°C)

VSD

−

−1.6

−1.3

−2.5

−

Vdc

Reverse Recovery Time

(IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V)

trr

−

50

ns

ta

−

40

−

tb

−

10

−

Reverse Recovery Stored Charge

QRR

−

0.10

−

mC

3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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