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2N2907ARHR Datasheet(PDF) 10 Page - STMicroelectronics |
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2N2907ARHR Datasheet(HTML) 10 Page - STMicroelectronics |
10 / 21 page Radiation hardness assurance 2N2907AHR 10/21 DocID15382 Rev 6 ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: – Test of 11 pieces by wafer, 5 biased at least 80% of V (BR)CEO , 5 unbiased and 1 kept for reference – Irradiation at 0.1 rad (Si)/s – Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 8. Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100°C. Table 7. Radiation summary Radiation test 100 krad “SW” 100 krad ESCC Wafer test each each Part tested 5 biased 5 biased + 5 unbiased Dose rate 0.1 rad/s 0.1 rad/s Acceptance Fixed values (1) 1. Part numbers with suffix "SW" have same pre and post irradiation electrical characteristics. Part number with suffix "SW35" have specific post irradiation electrical characteristics. MIL-STD-750 method 1019 Displacement damage Optional Optional Agency part number (ex) 5202/001/04 (2) 2. Example of the 2N2907A in LCC-3 Gold finish. 5202/001/04R (2) ST part number (ex) SOC2N2907ASW35 (1) SOC2N2907ARHRG Documents CoC + RVT CoC + RVT |
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