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2N2907ARUB Datasheet(PDF) 11 Page - STMicroelectronics |
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2N2907ARUB Datasheet(HTML) 11 Page - STMicroelectronics |
11 / 21 page DocID15382 Rev 6 11/21 2N2907AHR Radiation hardness assurance 21 Table 8. ESCC 5202/001R post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO Collector cut-off current (I E = 0) V CB = 50 V - 10 nA I EBO Emitter cut-off current (I C = 0) V EB = 3 V - 10 nA V (BR)CBO Collector-base breakdown voltage (I E = 0) I C = 10 μA60 - V V (BR)CEO (1) 1. Pulsed duration = 300 μs, duty cycle ≤ 2% Collector-emitter breakdown voltage (I B = 0) I C = 10 mA 60 - V V V (BR)EBO Emitter-base breakdown voltage (I C = 0) I E = 10 μA5 - V V CE(sat) (1) Collector-emitter saturation voltage I C = 150 mA I B = 15 mA - 0.4 V V BE(sat) (1) Base-emitter saturation voltage I C = 150 mA I B = 15 mA 1.3 V [h FE ] (1) Post irradiation gain calculation (2) 2. The post-irradiation gain calculation of [h FE ], made using h FE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. I C = 0.1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V [75] [100] [100] [50] - 300 |
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