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BSH114-215 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BSH114-215 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page Philips Semiconductors BSH114 N-channel enhancement mode field effect transistor Product specification Rev. 01 — 09 November 2000 8 of 13 9397 750 07708 © Philips Electronics N.V. 2000. All rights reserved. Tj =25 °C and 150 °C; VGS =0V ID = 0.5 A; VDD = 20 V and 80 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03ac60 0 1 2 3 0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 25 ºC Tj =150 ºC VGS = 0 V 03ac62 0 5 10 15 02 46 8 QG (nC) VGS (V) VDD = 20 V VDD = 80 V Tj = 25 ºC ID = 0.5 A |
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