BSH114-215 datasheet(8/13 Pages) NXP

Part #	BSH114-215

Description	N-channel enhancement mode field effect transistor

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Manufacturer	NXP [NXP Semiconductors]

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Philips Semiconductors

BSH114

N-channel enhancement mode ﬁeld effect transistor

Product speciﬁcation

Rev. 01 — 09 November 2000

8 of 13

9397 750 07708

Tj =25 °C and 150 °C; VGS =0V

ID = 0.5 A; VDD = 20 V and 80 V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage;

typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

03ac60

0

1

2

3

0

0.4

0.8

1.2

VSD (V)

IS

(A)

Tj = 25 ºC

Tj =150 ºC

VGS = 0 V

03ac62

0

5

10

15

02

46

8

QG (nC)

VGS

(V)

VDD = 20 V

VDD = 80 V

Tj = 25 ºC

ID = 0.5 A

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