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2SA1225 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SA1225 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1225 2010-02-05 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (mA) fT – IC Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta Common emitter VCE = −5 V 10 −0.003 30 50 100 300 500 −0.01 −0.03 −0.1 −0.3 −1 Tc = 100°C −25 25 −0.003 Common emitter IC/IE = 10 Tc = 100°C −0.05 −0.01 −0.03 −0.1 −0.3 −1 −0.1 −0.3 −0.5 −1 −3 −25 25 Common emitter VCE = −10 V Tc = 25°C 10 −5 −10 −30 −100 −300 −1000 30 50 100 300 (1) Tc = Ta Infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 0 0 24 20 40 60 80 100 120 140 160 4 8 12 16 20 (1) (2) (3) Common emitter Tc = 25°C 0 0 −1.0 −0.2 IB = −2 mA −0.4 −0.6 −0.8 −2 −4 −6 −8 −10 −12 −6 −8 −10 −20 −4 −14 0 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.005 −0.3 IC max (continuous) IC max (pulse)* DC operation Tc = 25°C VCEO max −100 −300 −10 −30 −1 −3 −0.01 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −3 −5 1 ms* 10 ms* |
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