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SIHL510 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHL510 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91297 www.vishay.com S11-0518-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRL510, SiHL510 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature •Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A (see fig. 12). c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 100 RDS(on) ( Ω)VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single N-Channel MOSFET G D S TO-220AB G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRL510PbF SiHL510-E3 SnPb IRL510 SiHL510 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 5.6 A TC = 100 °C 4.0 Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.29 W/°C Single Pulse Avalanche Energyb EAS 100 mJ Repetitive Avalanche Currenta IAR 5.6 A Repetitive Avalanche Energya EAR 4.3 mJ Maximum Power Dissipation TC = 25 °C PD 43 W Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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