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TPC8049-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8049-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8049-H 2009-06-18 5 0 30 10 40 0 0 100 12 4 16 VDD = 48 V VDS = 48 V 24 12 20 50 8 20 80 20 60 24 12 VGS 40 0 0.5 1 1.5 −80 −40 0 40 80 120 160 2 2.5 Ciss Coss Crss 10 0.1 100 1000 10000 1 10 100 VGS = 0 V 10 4.5 3 0 0.1 −0.2 10 100 −0.6 −0.8 −0.4 2 −1.2 1 1 −1.0 16 VGS = 10 V VGS = 4.5 V 160 −40 0 40 80 120 −80 4 0 8 ID = 3.3, 6.5, 13 A 12 ID = 3.3, 6.5, 13 A 2 1.2 0 0 40 80 120 0.4 1.6 160 (1) (2) 0.8 Drain-source voltage VDS (V) Capacitance – VDS Common source VGS = 0 V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta Common source Pulse test Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 0.5 mA Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics Drain-source voltage VDS (V) IDR – VDS Common source Ta = 25°C Pulse test Common source ID = 13 A Ta = 25°C Pulse test Ambient temperature Ta (°C) PD – Ta (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t=10s |
Similar Part No. - TPC8049-H |
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Similar Description - TPC8049-H |
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