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TPC8045-H Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8045-H Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8045-H 2013-11-01 4 VGS = 10 V 4.5 1 0.1 1 10 100 100 10 0.1 25 100 Ta = −55°C 100 0.1 1 100 10 10 0.1 1000 1 ID = 18 A 9 4.5 10 0 0.16 0.2 0 2 4 6 8 0.12 0.08 0.04 Ta = −55°C 25 100 0 0 1 2 3 20 50 30 4 5 10 40 ID – VDS VGS = 2.6 V 3.2 2.7 2.9 3.1 2 40 30 20 10 0 50 0 0.8 1.6 1.2 0.4 2.8 4.5 3 10 3.4 3.6 ID – VDS VGS = 2.5 V 2.6 2.7 2.9 20 12 8 0 16 4 0 0.2 0.4 0.6 0.8 1 4.5 10 2.8 3 3.1 3.4 Drain current ID (A) RDS (ON) – ID Common source Ta = 25 ℃ Pulse test Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) ID – VGS Common source VDS = 10 V Pulse test Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25℃ Pulse test Drain current ID (A) ⎪Yfs⎪ – ID Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test |
Similar Part No. - TPC8045-H |
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Similar Description - TPC8045-H |
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