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AEC-Q101-001 Datasheet(PDF) 1 Page - Vishay Siliconix |
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AEC-Q101-001 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor Revision: 14-Aug-13 1 Document Number: 89067 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount ESD Capability Rectifier TYPICAL APPLICATIONS General purpose, polarity protection, and rail-to-rail protection in both consumer and automotive applications. FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: MicroSMP Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 200 V, 400 V, 600 V IFSM 20 A VF at IF = 1.0 A 0.925 V IR 1 μA TJ max. 175 °C Package MicroSMP Diode variations Single die MicroSMP eSMP® Series Top View Bottom View Available MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL MSE1PB MSE1PD MSE1PG MSE1PJ UNIT Device marking code SB SD SG SJ Max. repetitive peak reverse voltage VRRM 100 200 400 600 V Max. average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 20 A Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Max. instantaneous forward voltage IF = 0.5 A TA = 25 °C VF (1) 0.940 - V IF = 1.0 A 1.016 1.1 IF = 0.5 A TA = 125 °C 0.834 - IF = 1.0 A 0.925 0.98 Max. reverse current Rated VR TA = 25 °C IR (2) -1.0 μA TA = 125 °C 3.7 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 780 - ns Typical junction capacitance 4.0 V, 1 MHz CJ 5- pF |
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