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AEC-Q101-001 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # AEC-Q101-001
Description  Surface Mount ESD Capability Rectifier
Download  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

AEC-Q101-001 Datasheet(HTML) 1 Page - Vishay Siliconix

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MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
Revision: 14-Aug-13
1
Document Number: 89067
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifier
TYPICAL APPLICATIONS
General
purpose,
polarity
protection,
and
rail-to-rail
protection in both consumer and automotive applications.
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage
current
• ESD capability
• Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free,
RoHS-compliant,
and
commercial grade
Base
P/NHM3
-
halogen-free,
RoHS-compliant,
and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
 40 ms
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V, 200 V, 400 V, 600 V
IFSM
20 A
VF at IF = 1.0 A
0.925 V
IR
1 μA
TJ max.
175 °C
Package
MicroSMP
Diode variations
Single die
MicroSMP
eSMP® Series
Top View
Bottom View
Available
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
MSE1PB
MSE1PD
MSE1PG
MSE1PJ
UNIT
Device marking code
SB
SD
SG
SJ
Max. repetitive peak reverse voltage
VRRM
100
200
400
600
V
Max. average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
20
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Max. instantaneous forward voltage
IF = 0.5 A
TA = 25 °C
VF (1)
0.940
-
V
IF = 1.0 A
1.016
1.1
IF = 0.5 A
TA = 125 °C
0.834
-
IF = 1.0 A
0.925
0.98
Max. reverse current
Rated VR
TA = 25 °C
IR (2)
-1.0
μA
TA = 125 °C
3.7
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
780
-
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
5-
pF


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